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EK-MM11D-OP-001
2000
22 pages
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Document:
MM11-D/DP Core Memory User's Manual
Order Number:
EK-MM11D-OP
Revision:
001
Pages:
22
Original Filename:
OCR Text
MM11-D/DP core memory user’'s manual dlifgliltiall EK-MM11D-OP-001 MM11-D/DP core memory user’'s manual digital equipment corporation - maynard, massachusetts 1st Edition, October 1976 Copyright © 1976 by Digital Equipment Corporation The material in this manual is for informational purposes and is subject to change without notice. Digital Equipment Corporation assumes no responsibility for any errors which may appear in this manual. Printed in U.S.A. This document was set on DIGITAL’s DECset-8000 computerized typesetting system. The following are trademarks of Digital Equipment Corporation, Maynard, Massachusetts: PDP DEC DECtape DECCOMM DECUS RSTS DECsystem-10 DIGITAL TYPESET-8 DECSYSTEM-20 MASSBUS TYPESET-11 UNIBUS CONTENTS Page CHAPTER 1 INTRODUCTION 1.1 INTRODUCTION 1.2 GENERAL DESCRIPTION . . . . o . . . . . . . e e 1.3 PHYSICAL DESCRIPTION . . . . . . . .. . CHAPTER 2 INSTALLATION 2.1 UNPACKING 2.2 ADDRESS SELECTION 2.3 BACKPLANE VOLTAGE CHECK 24 MODULE INSERTION . . . . . . . 2.5 CABLE CONNECTION . . . . . . o . . . e e . . . . . . . . e e e e e e e e e e e e DZQMB Diagnostic e e e e e e 2-1 e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e s e e e e e e e e e e e . . . . . . . . . . 2.7.3 1-1 2-3 PARITY CONTROLLER MMI11-D/DP Diagnostics e e e 2-1 DIAGNOSTIC ACCEPTANCE TESTS Memory Exerciser Diagnostic 1-1 e e . . . . . . . . .. . . it 2.6 2.7.2 1-1 e e e 2.7 2.7.1 e s e e e e e e e e e e e e it e e . . . . . . . . . . . . . . . . . . . o i e i e e e e e e e 2-5 e 2-5 2-5 e e 2-5 . . . . . .. ... ... .. .. ... ... . . . . . . . . . 2-5 e e e, e e e e e ... 2-6 e 2-6 ILLUSTRATIONS Figure No. Title 1-1 G652 Module . . . . . L 1-2 H222 Module . . . . . . . 1-3 MMILI-D/DP 2-1 Address Decoding Logic . . . . Page e e e e e e e e 1-3 e e e e e e e e e e e 1-4 e e e e e e e e e, 1-5 . . . ... ... ... ... .... S 2-2 TABLES Table No. Title 1-1 MM11-D/DP Specifications 2-1 Jumper Assignments for MM11-D Starting Addresses 2-2 Page . . . . . . . . . . .. e 1-2 . . . . . ... ... ... ... L. e 2-3 . . . . . . . . . . . . . . . . i 2-4 Jumper Assignments for MM11-D Starting Addresses (Interleaved-Memory Operation) 2-3 DD11-F Backplane Pin Assignments 24 Voltage Adjustment Procedure . . . . . . . . ... . ... ... ... . .. . . . . . . . . . . . . . ... ... ..., 24 e 2-5 CHAPTER 1 INTRODUCTION 1.1 INTRODUCTION This manual describes the MM11-D/DP Magnetic Core Memory, manufactured by Digital Equipment Corporation and provides the information needed to install and operate memory. 1.2 GENERAL DESCRIPTION The MM11-D/DP core memory is a low-cost, low-power, high-reliability memory designed to be used with the PDP-11 family Unibus. It assumes the role of a slave device to the PDP-11 processor or to any peripheral device that is designated bus master. The memory provides storage for 16- or 18-bit data words (two parity bits are included in the 18-bit word), and has a capacity of 16,384 (16K) words. The starting address of the MM11-D/DP can be set on any 8K boundary within the 124K Unibus address space (112K is the highest possible starting address); a special feature of the memory allows the user to assign part of the I/O page (124K-128K) to the MMI11-D/DP. Another feature of the MM11-D/DP - interleaving - permits the user to decrease the effective memory cycle time. Two memory modules are used, one being assigned the odd addresses within a 32K block of Unibus addresses, the other being assigned the even addresses within the same block. Thus, for consecutive word addresses, the memories are accessed alternately; hence, memory cycles can partially overlap, reducing the effective cycle time. 1.3 PHYSICAL DESCRIPTION The MM11-D/DP consists of an 8-1/2 in. X 15 in. hex multilayer motherboard (G652) and a hex stack (H222) that is attached to the motherboard. The G652 motherboard is inserted into a Unibus backplane; it contains the Unibus interface logic, the timing and control logic, the X and Y driver circuits, and the sense/inhibit circuits. The H722 stack contains the core plane, stack diodes, stack charge circuits, and temperature-sensing circuitry that facilitates compensation of core driving currents over the operating temperature range. Figures 1-1 and 1-2 show the separate memory modules; Figure 1-3 shows the two modules joined. A Parity Control module (M7850) is used with the MM11-DP memory and must be inserted into the same backplane as the memory (the MMI11-DP can be used as a non-parity memory). Refer to the M7850 Parity Controller maintenance manual for a description of the controller. 1-1 Table 1-1 MM11-D/DP Specifications Memory Type Magnetic core, read/write, random-access Core Configuration and Size Planar, 3W-3D, 18 mil O.D. Capacity MM11-D: 16,384 16-bit words MM11-DP: 16,384 18-bit words (2 byte parity bits) Maximum Access Time MMI11-D: 425 ns MM11-DP: 560 ns (when used with a Parity Control module) Maximum Cycle Time MMI11-D: 1 us MM11-DP: 1 us Voltage Requirements Current Requirements +20 Vdc, +3% +5 Vdc, +5% -5 Vdc, +5% dc Supply Active* Standby MM11-D/DP +20 Vdc 4.0 A 08 A +5 Vdc 4.0 A 40 A -5 Vdc 05 A 05A dc Supply Active Standby MM11-D/DP +20 Vdc Maximum Power Dissipation 80 W 16 W +5 Vdc 20W 20w -5 Vdc 25W 25W X—Y Current Margins +5% Ambient Temperature Operating Range In accordance with DEC STD 102, Class C Relative Humidity Operating Range In accordance with DEC STD 102, Class C *Active is defined as running all Os at 1.0 us repetition rate (worst case). 1-2 Figure 1-1 G652 Module Figure 1-2 H222 Module Figure 1-3 MMI11-D/DP 1-5 CHAPTER 2 INSTALLATION The MM11-D/DP installation is simple and straightforward. Follow the steps outlined in Paragraphs 2.1 through 2.7 below. 2.1 UNPACKING Carefully remove the memory modules from the shipping carton. 2.2 ADDRESS SELECTION Jumpers W1-W8 on the G652 module are involved in this procedure. The Unibus address space assigned to the MMI11-D depends on what address is selected as the MM 11 starting address. This starting address can be any one that begins an 8K block of addresses; for example, 0000005 (0K ), 040000; (8K), 1400005 (24K). The starting address is assigned by inserting jumper wires at specified locations in the Address Decoding logic (Figure 2-1). When the starting address appears on the Unibus address bus, the Address Decoding logic asserts the BANK SEL H signal. If both the Unibus and the MM11 timing logic are not busy, the BANK SEL H signal enables BUS MSYN L to start the timing chain. The BANK SEL H signal can be asserted when either NAND gate E27 or E28 is enabled. However, during normal operation, wherein the uppermost 4K of Unibus address space is reserved for peripheral devices, there is no jumper wire installed at location W8; consequently, only NAND gate E28 need be considered. This gate is enabled whenever an address from the assigned 16K block appears on the Unibus address lines. The starting address of this block is determined by the arrangement of jumpers at locations W1-W4, Jumpers are inserted at these four locations in such a way that any assigned address causes the outputs from adder E6 to be high. Two of these outputs, 23 and 24, go directly to NAND gate E28. A third, 22, goes to multiplexer E16; during noninterleaved operation, the ¢2 output is gated through the multiplexer to NAND gate E28. The fourth input to the gate is from NAND gate E7, which is enabled only for addresses within the 4K reserved area. Table 2-1 lists the possible starting address for the MM11-D memory, the ending address (plus 1) corresponding to each starting address, and the disposition of jumper wires at locations W1-W4. For example, an MM11-D memory can be assigned address space beginning at address 0400005 (8K) if a jumper is inserted at location W3. The ending address will be 1377773 (24K-1). Each address in this 16K block will cause NAND gate E28 to be enabled, resulting in the assertion of BANK SEL H. As mentioned earlier, in normal operation the upper 4K of memory addresses is reserved for peripheral devices on the Unibus. In special applications, where the number of peripheral devices is small, some of these reserved addresses can be used by the MM 11-D. Thus, if a jumper is inserted at location W8, Unibus addresses from 124K to 126K-1(7600005 — 767777s) will cause NAND gate E27 to be enabled and BANK SEL H will be asserted. If a jumper is inserted at W7, in addition to one at W8, addresses from 124K to 127K-1 (7600005 — 7740005) will be assigned to the MMI11. Note that for systems without Memory Management, the useful address space can be extended from 28K to 30K-1, or 31K-1. NOTE If use of the reserved I/O page of addresses is being considered, check carefully to ensure that, first, no peripheral devices (including bootstrap ROM’s) are assigned any of the reserved addresses, and second, all DIGITAL software is compatible with the reduced peripheral address space. 2-1 _MMVYoV 18€GIbLl IHIH|alaVa2o€$X3S—3My0¥a18vNI uy[0T(07 — ww YM-V -l LSlNv8 9SlN18v GSlNv8 SvNinvg -~ 2sSlnvg isSVn8 \9 =v9 ¢AxM_” N<l—O|0 93 1 Sng i@V - cg 123 AE+ 2-2 -oIS Table 2-1 Jumper Assignments for MM11-D Starting Addresses Starting Ending Address Address +1 0 8K 16K 16K 24K wi w2 W3 w4 OUT OUT OUT OUT OUT OuUT OUT IN IN IN OUT OUT IN OouT IN OUT 24K 32K 40K 40K 48K 56K 64K OUT OuUT IN IN IN IN OUT IN 56K 64K 72K 72K 80K 88K IN IN IN OouT OUT OUT OuUT OUT IN OUT IN OUT 80K 96K IN OUT IN IN 88K 104K IN IN OouT OuUT 32K 48K OUT IN OUT IN 96K 112K IN IN OuT IN 104K 120K IN IN IN OUT 112K 124K IN IN IN IN Note: OUT =logic 1, IN =logic O. Two MM11-D memories can be interleaved, i.e., one memory can be assigned the odd addresses within a 32K block of addresses, while the other can be assigned the even addresses within the same block. Interleaving is accomplished by inserting jumpers at locations W5 and W6 of each memory’s Address Decoding logic and assigning each memory the same starting address (the starting address for interleaved memories is assigned differently than is the starting address for a single memory; Table 2-2 relates interleaved starting addresses and the disposition of jumpers at locations W1-W4). For example: to interleave two memories so that they cover Unibus address space from 0K-32K, first insert a jumper at locations W3 and W4 of each memory’s Address Decoding logic, thereby setting the starting address at 0K; then, insert jumpers at locations W5 and W6 to assign one memory the even addresses (W5 in, W6 out) and the other memory the odd addresses (W5 out, W6 in). Any address in the assigned 32K block causes adder outputs 3 and =4 to be high. However, the 22 output is not gated through multiplexer E16 to NAND gate E28; instead, the fO output of the multiplexer represents the state of the BUS A0l L signal. Thus, an odd address (BUS A0l L is asserted) causes fO of the odd-address-memory multiplxer to be high; BANK SEL H is asserted by this memory. Alternately, an even address (BUS A0l L is negated) causes fO of the even-address-memory multiplexer to be high and BANK SEL H is asserted by this memory. 2.3 BACKPLANE VOLTAGE CHECK Check the backplane assembly to ensure that the correct dc voltages are present (Table 2-3 lists the DD11-F “modified Unibus” backplane pins and the signal available on each pin). The voltages and their limits are listed below; if they must be adjusted, use the procedure shown in table 2-4. Voltage (dc) Backplane Pin +20 Vdc £3% Al1U, A1V, A2V +5 Vdc £5% A2A, B2A, C2A, D2A, F2A -5Vdc £5% B2V 2-3 Table 2-2 Jumper Assignments for MM11-D Starting Addresses (Interleaved-Memory Operation) Starting Ending Address Address +1 wi w2 W3 w4 0 32K OUT OouT IN IN 8K 40K OUT IN OUT ouT 16K 48K OUT IN - OUT IN 24K 56K OuUT IN IN OuUT 32K 64K OuT IN IN IN 40K 72K IN OUT OUT OUT 48K 56K 64K IN IN IN OouT OouT OouT OouT IN IN IN IN OuT 80K 80K 88K 96K 104K 112K IN IN OouT IN ouT IN OouT IN 88K 120K IN IN IN OouT 96K 124K IN IN IN IN 72K Table 2-3 DD11-F Backplane Pin Assignments A | INITL +5V 2 1 2 D C B A 1 2 1 DATIPCLR | +5V 1 2 +5V +5V GND GND 1 2 1 2 PAUSE L B INTR L T.P. C D00 L GND D D02 L DO1 L T.P. BRS L GND BATTERY BR4 L GND GND +5 E D04 L DO3 L STACK INT PARITY SSYN L DETECTL | VREF F D06 L DOS L ACLOL DCLOL H DO8 L DO7 L AOl L AOO L J DIO L D09 L AO3 L AO2 L AO4 L BUS G7 K D12 L DI1L AO5 L L D14 L D13 L AQO7 L AO6 L M PA L DIS L AO9 L AO8 L N PARITY Pl L PBL All L AlIOL BUS Go OUTH P PARITY POL BBSYL | AI3L Al12 L BUS G5 SO H R SACKL | AISL Al4 L S NPR L Al7 L Al6 L BR7 L GND Cl1L T GND SOH BUS G7 OUTH BUS G6 SO H BUS G5 OUTH U +20V BR6 L SSYNL COL \% +20V +20V MSYN L -5V BUS G4 SOH GND 2-4 GND | BUSG4 OUTH |GND GND Table 2-4 Voltage Adjustment Procedure NOTE The following steps must be performed sequentially. Step No. 1. Procedure | Power down the equipment. 2. | Disconnect the load from the power supply. 3. | Power up the equipment. 4. | Connect the digital voltmeter to the +20 V and -5 V outputs of the power supply. 5. | Adjust the +20 V potentiometer for a 25 V reading. 6. | Connect the digital voltmeter between the -5 V output and ground. 7. | Adjust the -5 V potentiometer for -5 V. This procedure is necessary because the +20 V potentiometer sets the overall output of the regulator (25 V from +20 V to -5 V) while the -5 V adjustment controls the -5 V to ground output. 8. 9. 2.4 Power down and then reconnect the load. | Power up, recheck the voltages at the option backplane, and if necessary, adjust the outputs again. MODULE INSERTION Ensure that the H222 module is firmly attached to the G652 module. Insert the G652 into the DD11-F backplane; any one of slots 2-7 can be used. If a parity controller is used, it can be inserted in connectors A and B in any of slots 2-8 (parity and non-parity memory cannot be mixed on the same backplane). 2.5 CABLE CONNECTION Connect the BC11-A Unibus cable to the memory. If this is the last device on the bus, terminate the Unibus by placing a 9302 terminator in the BUS OUT slot. If the memory is not the last device, continue the bus by placing an M920 jumper module or the BC11-A cable connector in the BUS OUT slot. 2.6 PARITY CONTROLLER If the system uses an M7850 Parity Controller, refer to the controller manual for information concerning the installation and adjustment of the M7850 module. 2.7 2.7.1 DIAGNOSTIC ACCEPTANCE TESTS MMI11-D/DP Diagnostics Load and run the MM11-D/DP diagnostic programs. Verify that the program printout agrees with the total memory in the system. 2-5 2.7.2 Memory Exerciser Diagnostic Connect the Unibus Voltage Margin Tester to the memory at connector J180 on the G652 module. Run two passes of the 0-124K Memory Exerciser Diagnostic (MAINDEC-11-DZQMB) with the margin tester switches set at each of the four possible ““on” positions: XY CURRENT HIGH - allows high (+5%) memory drive current; XY CURRENT LOW - allows low (-5%) memory drive current; STROBE EARLY - allows an early sense strobe (-15 ns); STROBE LATE - allows a late sense strobe (+15 ns). NOTE Only margin the memory with one parameter at a time. Even good memories may fail under some combinations of drive and strobe margins. 2.7.3 DZQMB Diagnostic Disconnect the margin tester. Run the DZQMB diagnostic to verify normal operation. MM11-D/DP CORE MEMORY Reader’s Comments USER’S MANUAL EK-MM11D-OP-001 Your comments and suggestions will help us in our continuous effort to improve the quality and usefulness of our publications. What is your general reaction to this manual? In your judgment is it complete, accurate, well organized, well written, etc.? Is it easy to use? CUT OUT ON DOTTED LINE What features are most useful? What faults do you find with the manual? Does this manual satisfy the need you think it was intended to satisfy? Does it satisfy your needs? Why? Would you please indicate any factual errors you have found. Please describe your position. Name Organization Street Department City State Zip or Country FIRST CLASS PERMIT NO. 33 LI MAYNARD, MASS. BUSINESS REPLY MAIL NO POSTAGE STAMP NECESSARY IF MAILED IN THE UNITED STATES Postage will be paid by: Digital Equipment Corporation Technical Documentation Department Digital Park, PK3-2 Maynard, Massachusetts 01754 dliigliltall digital equipment corporation Printed in U.S.A.
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